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Vol. 16 (2013 year), No. 1

Shakhmaeva A.R., Zakharova P.R., Feilamazova S.A.
Thickening of metals in silicon nanosize pores at formation of drain region of power transistor

In the paper drawing of metals in silicon nanosize pores formed due to sandblasting at contact with the drain region of transistor structure has been investigated. Results of research of silicon structure substrate after precipitation of the composition "chrome – nickel – tin – silver" have been shown. The scanning electronic x-ray microanalyzer and x-ray microdifractometer were used for research. It has been shown that the received nanosize pores improve adhesive properties of the silicon substrate surface.

(in Russian, стр.3, fig. 3, tables. 0, ref 2, Adobe PDF , Adobe PDF 0 Kb)